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 mESD3.3DT5G SERIES ESD Protection Diodes
In Ultra Small SOT-723 Package
The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications.
Specification Features:
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1 3 2
* Small Body Outline Dimensions: * * * * * * * *
0.047 x 0.032 (1.20 mm x 0.80 mm) Low Body Height: 0.020 (0.5 mm) Stand-off Voltage: 3.3 V - 6.0 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000-4-2 Level 4 ESD Protection IEC61000-4-4 Level 4 EFT Protection These are Pb-Free Devices
PIN 1. CATHODE 2. CATHODE 3. ANODE
3 1 2
MARKING DIAGRAM
xx M
SOT-723 CASE 631AA STYLE 4
Mechanical Characteristics: CASE: Voidfree, transfermolded, thermosetting plastic
xx M
= Device Code = Date Code
Epoxy Meets UL 94 V-0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260C
ORDERING INFORMATION
Device mESDxxDT5G Package SOT-723 Shipping 8000/Tape & Reel
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT) ESD Voltage Per Human Body Model Per Machine Model PD RqJA TJ, Tstg TL Air Contact Symbol Value 30 30 40 16 400 240 1.9 525 -55 to +150 260 Unit kV A kV V mW mW/C C/W C C
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking column of the table on page 2 of this data sheet.
Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in.
(c) Semiconductor Components Industries, LLC, 2008
1
February, 2008 - Rev. 2
Publication Order Number: mESD3.3DT5G/D
mESD3.3DT5G SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Max. Capacitance @VR = 0 and f = 1 MHz IPP VC VBR VRWM IR VF IT V IF I
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
VRWM (V) Max 3.3 5.0 6.0 IR (mA) @ VRWM Max 1.0 0.1 0.1 VBR (V) @ IT (Note 2) Min 5.0 6.2 7.0 IT mA 1.0 1.0 1.0 C (pF) Typ 47 38 34
Device* mESD3.3DT5G mESD5.0DT5G mESD6.0DT5G
Device Marking L0 L2 L3
*Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25C.
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mESD3.3DT5G SERIES
TYPICAL CHARACTERISTICS
BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) 7.4 7.3 7.2 7.1 7.0 6.9 6.8 6.7 6.6 6.5 6.4 6.3 - 55 + 25 TEMPERATURE (C) + 150 mESDxxDT5G IR (nA) 20 18 16 14 12 10 8 6 4 2 0 -55 + 25 TEMPERATURE (C) + 150 mESDxxDT5G
Figure 1. Typical Breakdown Voltage versus Temperature
45 40 CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 mESDxxDT5G PD, POWER DISSIPATION (mW) 300 250 200 150 100
Figure 2. Typical Leakage Current versus Temperature
FR-5 BOARD 50 0 0 25 50 75 100 125 TEMPERATURE (C) 150 175
BIAS VOLTAGE (V)
Figure 3. Typical Capacitance versus Bias Voltage
Figure 4. Steady State Power Derating Curve
Figure 5. Positive 8 kV contact per IEC 6100-4-2 - mESD5.0DT5G
Figure 6. Negative 8 kV contact per IEC 61000-4-2 - mESD5.0DT5G
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mESD3.3DT5G SERIES
PACKAGE DIMENSIONS
SOT-723 CASE 631AA-01 ISSUE A
-XD b1 -Y3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098
A E
1 2
L C
HE
e
b 2X 0.08 (0.0032) X Y
DIM A b b1 C D E e HE L
STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE
SOLDER FOOTPRINT*
0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157
0.40 0.0157
0.40 0.0157
SCALE 20:1 mm inches
SOT-723
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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mESD3.3DT5G/D


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